Modeling of temperature effects on band structure in type-II superlattices using an empirical tight-binding method

The band edge energy and effective mass of type II superlattices on a (0 0 1) GaSb substrate at different temperatures have been investigated using the empirical sp(3)s* tight-binding method. The band gap of InAs/GaSb superlattices and InAs/GaSb/AlSb/GaSb M-structure as a function of temperature is fitted using empirical Varshni's equation. The effective mass as a function of temperature was also calculated by employing the numerical second derivative of the band energy dispersion curve. Based on the above calculation model, the analytical and numerical model of P-pi-M-N device structure of superlattices model as an example was established to describe the dependence of band structure on the working temperature, which will provide guidance to achieve the higher performance.

Automated summary

Using the empirical sp(3)s* tight-binding method, the band edge energy and effective mass of type II superlattices on a (0 0 1) GaSb substrate at different temperatures were investigated. The band gap of InAs/GaSb superlattices and InAs/GaSb/AlSb/GaSb M-structure was fitted using empirical Varshni's equation. The effective mass as a function of temperature was calculated through the numerical second derivative of the band energy dispersion curve. Furthermore, a model of P-pi-M-N device structure of superlattices was established to describe the dependence of band structure on the working temperature.