Nonvolatile Control of Metal-Insulator Transition in VO2 by Ferroelectric Gating

Controlling phase transitions in correlated materials yields emergent functional properties, providing new aspects to future electronics and a fundamental understanding of condensed matter systems. With vanadium dioxide (VO2), a representative correlated material, an approach to control a metal-insulator transition (MIT) behavior is developed by employing a heteroepitaxial structure with a ferroelectric BiFeO3 (BFO) layer to modulate the interaction of correlated electrons. Owing to the defect-alleviated interfaces, the enhanced coupling between the correlated electrons and ferroelectric polarization is successfully demonstrated by showing a nonvolatile control of MIT of VO2 at room temperature. The ferroelectrically-tunable MIT can be realized through the Mott transistor (VO2/BFO/SrRuO3) with a remanent polarization of 80 mu C cm(-2), leading to a nonvolatile MIT behavior through the reversible electrical conductance with a large on/off ratio (approximate to 10(2)), long retention time (approximate to 10(4) s), and high endurance (approximate to 10(3) cycles). Furthermore, the structural phase transition of VO2 is corroborated by ferroelectric polarization through in situ Raman mapping analysis. This study provides novel design principles for heteroepitaxial correlated materials and innovative insight to modulate multifunctional properties.

Automated summary

By controlling phase transitions in correlated materials, new functional properties can be achieved. This study demonstrates the control of a nonvolatile metal-insulator transition in vanadium dioxide (VO2) using a ferroelectric layer, showing enhanced coupling between correlated electrons and ferroelectric polarization. The research provides insights into interface properties, structural phase transitions, and design principles for heteroepitaxial correlated materials.