Low-Temperature Plasma-Assisted Growth of Large-Area MoS2 for Transparent Phototransistors

MoS2-based transparent electronics can revolutionize the state-of-the-art display technology. The low-temperature synthesis of MoS2 below the softening temperature of inexpensive glasses is an essential requirement, although it has remained a long persisting challenge. In this study, plasma-enhanced chemical vapor deposition is utilized to grow large-area MoS2 on a regular microscopic glass (area approximate to 27 cm(2)). To benefit from uniform MoS2, 7 x 7 arrays of top-gated transparent (approximate to 93% transparent at 550 nm) thin film transistors (TFTs) with Al2O3 dielectric that can operate between -15 and 15 V are fabricated. Additionally, the performance of TFTs is assessed under irradiation of visible light and estimated static performance parameters, such as photoresponsivity is found to be 27 A W-1 (at lambda = 405 nm and an incident power density of 0.42 mW cm(-2)). The stable and uniform photoresponse of transparent MoS2 TFTs can facilitate the fabrication of transparent image sensors in the field of optoelectronics.

Automated summary

This study utilizes plasma-enhanced chemical vapor deposition to grow large-area MoS2 on regular glass and fabricate transparent thin film transistors (TFTs) with good performance parameters. The stable and uniform photoresponse of transparent MoS2 TFTs is significant for the fabrication of transparent image sensors in the field of optoelectronics.