Robust Interfacial Modifier for Efficient Perovskite Solar Cells: Reconstruction of Energy Alignment at Buried Interface by Self-Diffusion of Dopants

The under-coordinated defects within perovskite and its relevant interfaces always attract and trap the free carriers via the electrostatic force, significantly limiting the charge extraction efficiency and the intrinsic stability of perovskite solar cells (PSCs). Herein, self-diffusion interfacial doping by using ionic potassium L-aspartate (PL-A) is first reported to restrain the carrier trap induced recombination via the reconstruction of energy level structure at SnO2/perovskite interface in conventional n-i-p structured PSCs. Experiments and theories are consistent with the PL-A anions that can remain at the SnO2 surface due to strong chemical adsorption. During the spin-coating of the perovskite film, the cations gradually diffuse into perovskite and endow an n-doping effect, which provides higher force and a better energy level alignment for the carrier transport. As a result, they obtained 23.74% power conversion efficiency for the PL-A modified small-area devices, with dramatically improved open-circuit voltage of 1.19 V. The corresponding large-area devices (1.05 cm(2)) achieved an efficiency of 22.23%. Furthermore, the modified devices exhibited negligible hysteresis and enhanced ambient air stability exceeding 1500 h.

Automated summary

This study reports the use of self-diffusion interfacial doping with ionic potassium L-aspartate to restrain carrier trap induced recombination in perovskite solar cells. The diffusion of potassium ions into the perovskite film provides an n-doping effect, leading to improved carrier transport efficiency and energy level alignment. The modified devices achieved high power conversion efficiency and enhanced stability.