4.7 Article

Intriguing heterophase domain patterns in correlated electron material via tip force engineering

期刊

ACTA MATERIALIA
卷 235, 期 -, 页码 -

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2022.118089

关键词

Vanadium dioxide; Metal-insulator transition; Heterophase domain pattern; Strain engineering; Tip force

资金

  1. National Natural Science Foundation of China [12132020, 11972382, 12072379, 12072380, 12172386, 11832019]

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This study explores the mechanical creation of intriguing heterophase domain patterns in vanadium dioxide using tip pressing forces, and demonstrates the influence of these patterns on electronic transport behavior. It also showcases potential device concepts based on the induced heterophase domain patterns.
Vanadium dioxide (VO 2 ) is a compelling correlated electron material in advanced electronics and fundamental research, for its fascinating metal-insulator transition (MIT) and tunability by external stimuli. However, despite of its well-known strain sensitivity, the potential of local strain control of the heterophase domain patterning in VO 2 remains largely unexamined. Here, we report that intriguing heterophase domain patterns can be mechanically created in VO 2 platelets via tip pressing forces. Based on tip-domain and domain-domain interactions, letter-shaped patterns (e.g., 'I', 'V', 'N', 'W', 'Y', etc.) and geometry-shaped patterns (e.g., wedge, parallelogram, triangle, diamond, etc.) can be readily obtained. Moreover, the global and local electronic transport behaviors of VO 2 platelets are sensitive to the induced heterophase domain patterns, based on which, device concepts like force-gate-transistors and anticrosstalk devices are demoed. The feasible tip force control on the MIT heterophase structures of VO 2 also paves a way to explore the phase transition physics of materials with a strong first-order feature. (c) 2022 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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