4.8 Article

Alkene-Catalyzed Rapid Layer-by-Layer Thinning of Black Phosphorus for Precise Nanomanufacturing

期刊

ACS NANO
卷 16, 期 8, 页码 13111-13122

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.2c05909

关键词

black phosphorus; thinning; nanopatterning; catalysis; thickness monitoring

资金

  1. National Key R&D Program of China [2020YFA0711003]
  2. National Natural Science Foundation of China [52175174]
  3. open research fund of Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments [KF202004]

向作者/读者索取更多资源

This study proposes a method for precisely thinning black phosphorus layer by layer using alkene oxidation, providing a new approach for nanopatterning. Through density functional theory calculations and precise preparation of few-layer BP, heterojunctions of BP have been successfully fabricated, demonstrating the potential of this technology in high-performance nanodevice design.
Black phosphorus (BP) is a promising material for electronic and optoelectronic applications. However, it is still challenging to obtain geometrically well-defined BP with desirable thickness. The method involving rapid BP surface reaction via alkene-catalyzed oxidation and easy removal of reactants by a mechanical effect was proposed to achieve the precise layer-by-layer thinning and real-time thickness monitoring of BP for nanopatterning with high spatial resolution based on mechanical scanning probe nanolithography. The enhanced electron affinity of oxygen with the assistance of a carbon- carbon double bond (C=C) in the alkene was demonstrated by density functional theory calculations, shortening the BP surface oxidation period by 99%, which provides access for the rapid thinning. The few-layer BP nanoflake with nested structure and arbitrary thickness on various substrates and the nanopatterned heterojunctions (BP/graphene and BP/hexagonal boron nitride) can be precisely fabricated by the adjustment of scanning number under a small load. This thinning technology was efficient and universal, which could be used to fabricate a BP field-effect transistor with a thinned channel to enhance the capability for current modulation, showing great potential applications for designing high-performance nanodevices.

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