期刊
ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 25, 页码 29025-29031出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c06870
关键词
scanning thermal microscopy; temperature mapping; volatile memory; threshold switching; negative differential resistance; niobium oxide
This study uses scanning thermal microscopy (SThM) as an alternative thermal mapping technique to map the temperature distribution in NbOx-based cross-bar and nanovia devices. The measurements reproduce the current redistribution and confinement processes previously observed by other techniques and demonstrate the high spatial resolution of SThM.
Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator-metal transitions in oxide-based memrsitive devices. In this study, we use scanning thermal microscopy (SThM) as an alternative thermal mapping technique that offers high spatial resolution imaging (similar to 100 nm) and is independent of material. Specifically, SThM is used to map the temperature distribution in NbOx-based cross-bar and nanovia devices with Pt top electrodes. The measurements on cross-bar devices reproduce the current redistribution and confinement processes previously observed by TRTI but without the need to coat the electrodes with a material of high thermo-reflectance coefficient (e.g., Au), while those on the nanovia devices highlight the spatial resolution of the technique. The measured temperature distributions are compared with those obtained from physics-based finite-element simulations and suggest that thermal boundary resistance plays an important role in heat transfer between the active device volume and the top electrode.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据