期刊
ACS APPLIED MATERIALS & INTERFACES
卷 -, 期 -, 页码 -出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c01892
关键词
blister; metal precursor; CZTSSe; stacking order; nanopore
资金
- National Research Foundation (NRF) - Ministry of Science and ICT, Republic of Korea [2022M3J1A1085371]
- DGIST R&D Programs of the Ministry of Science and ICT, Republic of Korea [22-CoE-ET-01, 22-ET08]
- National Research Foundation of Korea (NRF) - Korean government [2021R1G1A1006384]
- National Research Foundation of Korea [22-COE-ET-01, 2022M3J1A1085371] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this study, the effect of the stacking order of metal precursors on the formation of volume defects in CZTSSe thin-film solar cells was investigated. The mechanisms for blister and nanopore formation were proposed, providing insights for further development of volume-defect-formation suppression technology.
In this study, we investigated the effect of the stacking order of metal precursors on the formation of volume defects, such as blisters and nanopores, in CZTSSe thin-film solar cells. We fabricated CZTSSe thin films using three types of metal-precursor combinations, namely, Zn/Cu/Sn/Mo, Cu/Zn/Sn/Mo, and Sn/Cu/Zn/Mo, and studied the blister formation. The blister-formation mechanism was based on the delamination model, taking into consideration the compressive stress and adhesion properties. A compressive stress could be induced during the preferential formation of a ZnSSe shell. Under this stress, the adhesion between the ZnSSe film and the Mo substrate could be maintained by the surface tension of a metallic liquid phase with good wettability, or by the functioning of ZnSSe pillars as anchors, depending on the type of metal precursor used. Additionally, the nanopore formation near the back-contact side was found to be induced by the columnar microstructure of the metal precursor with the Cu/Zn/Mo stacking order and its dezincification. Based on the two volume-defect-formation mechanisms proposed herein, further development of volume-defect-formation suppression technology is expected to be made.
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