4.8 Article

Phase Transformation-Induced Quantum Dot States on the Bi/Si(111) Surface

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 31, 页码 36217-36226

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c07015

关键词

quantum dots; phase transformation control; Bi/Si(111); STM; two-dimensional

资金

  1. Natural Sciences and Engineering Research Council of Canada (NSERC)
  2. Hart Professorship
  3. University of Toronto
  4. Canada Foundation for Innovation [RGPIN-2017-06069, RGPIN-2018-04642]
  5. NSERC
  6. Government of Ontario
  7. Fed Dev Ontario
  8. University of Toronto

向作者/读者索取更多资源

This research reports a phase transition-induced quantum dot system at the nanoscale, providing a new strategy for further downsizing of electronic devices.
Nanopatterns at near atomic dimensions with controllable quantum dot states (QDSs) are promising candidates for the continued downscaling of electronic devices. Herein, we report a phase transition-induced QD system achieved on the root 3 x root 3-Bi/Si(111) surface reconstruction, which points the way to a novel strategy on QDS implementation. Combining scanning tunneling microscopy, scanning tunneling spectroscopy, and density functional theory (DFT) calculations, the structure, energy dispersion, and size effect on band gap of the QDs are measured and verified. As-created QDs can be manipulated with a dot size down to 2 nm via Bi phase transformation, which, in turn, is triggered by thermal annealing at 700 K. The transition mechanism is also supported by our DFT calculations, and an empirical analytical model is developed to predict the transformation kinetics.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据