4.8 Article

Van der Waals Epitaxy of Thin Gold Films on 2D Material Surfaces for Transparent Electrodes: All-Solution-Processed Quantum Dot Light-Emitting Diodes on Flexible Substrates

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 32, 页码 36855-36863

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c09645

关键词

2D materials; MoS2; gold anode; CdSe@CdZnS; ZnS quantum dots; flexible devices

资金

  1. Ministry of Science and Technology, Taiwan [MOST 110-2221-E-143-005, MOST 111-2221-E-143-003-MY2]
  2. Academia Sinica, Taiwan [AS-iMATE-111-41]

向作者/读者索取更多资源

With the help of vdW epitaxy, nanometer-thick and highly conductive gold films are deposited onto MoS2 surfaces as transparent anode electrodes for QLEDs. The Au film exhibits excellent tensile bending stability and can replace current ITO anode electrodes for flexible device applications.
With the assistance of van der Waals (vdW) epitaxy, nanometer-thick and highly conductive gold films are deposited onto MoS2 surfaces for use as transparent anode electrodes in quantum dot light-emitting diodes (QLEDs) on poly(ethylene terephthalate) (PET) substrates. After transferring wafer-scale and monolayer MoS2 to PET substrates, 10 nm thick gold (Au) films are deposited onto the two-dimensional (2D) material surfaces as anode electrodes. Bounded only by weak vdW forces on 2D material surfaces, the diffusive Au adatoms tend to facilitate lateral growth and lead to the formation of continuous and highly conductive thin metal films in the nanometer regime. The Au film exhibits excellent tensile bending stability for its sheet resistance, which is superior to that of rigid indium-tin oxide (ITO) films on PET substrates. Thermally stable CdSe@CdZnS/ZnS QLEDs are fabricated on the PET substrate. Compared with devices fabricated on sapphire substrates, the phenomenon of sub-bandgap turn-on is observed for the flexible device. Based on our demonstrations, the high conductivity and robust durability toward substrate bending make the nanometer-thick Au film grown on 2D material surfaces a promising candidate to replace current ITO anode electrodes for flexible device applications.

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