期刊
FLEXIBLE AND PRINTED ELECTRONICS
卷 7, 期 2, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/2058-8585/ac72dd
关键词
printed electronics; organic field-effect transistors; parameter extraction methods; charge-carrier mobility; contact resistance
资金
- National Research Foundation of Korea (NRF) - Korean government (MSIT) [NRF-2019R1C1C1003356]
This paper applies a robust self-consistent parameter extraction method to study high-performance p-type printed polymer field-effect transistors. Contact resistance and intrinsic channel mobility are simultaneously extracted using an analytically reinforced transmission-line method, allowing for full gate-voltage dependence. The results show a minimum width-normalized contact resistance of 12 kΩcm and a maximum hole mobility of 1.9 cm^2V-1s-1. Additionally, the gate-voltage-dependent mobility is explained within the framework of trap-and-release transport through double-exponential density of states, revealing a low disorder energy of 29 meV near the transport orbital.
In this paper, a robust self-consistent parameter extraction method is applied to high-performance p-type printed polymer field-effect transistors. Simultaneous extraction of contact resistance and intrinsic channel mobility with their full gate-voltage dependence is achieved through an analytically reinforced transmission-line method. The proposed method yields a minimum width-normalized contact resistance of 12 k omega cm and a maximum hole mobility of 1.9 cm(2) V-1 s(-1). Moreover, the gate-voltage-dependent mobility is interpreted in the framework of trap-and-release transport through double-exponential density of states, unveiling a disorder energy near the transport orbital as low as 29 meV.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据