期刊
MATERIALS TODAY CHEMISTRY
卷 24, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mtchem.2022.100906
关键词
Deep trap; Persistent luminescence; Co -doping; Information storage; Rare -earth doped materials
资金
- Natural Science Foundation of Jiangsu Province [BK20210481]
- Fundamental Research Funds for the Central Universities [JUSRP122015]
- National Natural Science Foundation of China [U1832110]
This study reports on persistent luminescent materials with deep-level traps, which exhibit controlled photon release upon thermal stimulation, showing potential applications in optical information storage and encryption.
Persistent luminescent materials containing deep-level traps have attracted extensive research interest in the field of optical information storage due to their unique features of long-lasting emission, energy storage, and controllable photon release upon external stimulations. However, the lack of suitable luminescent materials with deep-level traps is still the bottleneck of such an optical storage application. Herein, we report a series of persistent luminescent materials with reddish-orange emissions and controllable photon release upon thermal stimulation. Through substitution of Sn by Si, more and deeper trap levels are achieved in Sr2SnO4:Sm3+ ,Si4+ phosphors. Moreover, both ultraviolet light and high-energy X-ray irradiations can induce reddish-orange emitting persistent luminescence from the as-synthesized samples. Rewritable optical information storage and readout based on photon trapping and de-trapping processes are demonstrated. Optical information can be handily encoded using a commercially available 365 nm light-emitting diode, and decoded upon thermal stimulation. The Sr2SnO4:Sm3+ ,Si4+ phosphors as presented in this work show a great promise for rewritable optical data storage and information encryption. (C) 2022 Elsevier Ltd. All rights reserved.
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