期刊
ACS APPLIED NANO MATERIALS
卷 5, 期 6, 页码 7652-7657出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsanm.2c00851
关键词
carbon nanotubes; memory; floating gate; density; program/erase window
资金
- National Research Foundation (NRF) of Korea [2019R1A2B5B01069988, 2016R1A5A1012966]
- National Research Foundation of Korea [2019R1A2B5B01069988] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this paper, all-solution-processed carbon nanotube (CNT) floating gate memories (FGMs) are demonstrated. By controlling the metallic CNT (m-CNT) floating gate density, the electrical and memory performance of the FGMs are evaluated. The results show that the m-CNT floating gate density is a critical design variable for achieving all-CNT FGMs or their memory modules.
Carbon nanotubes (CNTs) are unique materials that can be used in both electrodes and channels in field-effect transistors because they can be separated into semiconducting and metallic CNTs (s-CNTs and m-CNTs). In this paper, all-solution-processed CNT floating gate memories (FGMs) are demonstrated by combining 99% m-CNTs for electrodes and s-CNTs for channels. The electrical and memory performance is evaluated by controlling the m-CNT FG density, and the program and erase characteristics are discussed in detail. From the results, we conclude that the m-CNT FG density is a critical design variable when realizing all-CNT FGMs or their memory modules.
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