4.7 Article

Band Edge Carrier-Induced Sign Reversal of an Ultrafast Nonlinear Optical Response in Few-Layer ReS2 Nanoflakes

期刊

ACS APPLIED NANO MATERIALS
卷 5, 期 4, 页码 5479-5486

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsanm.2c00471

关键词

band edge carrier; sign reversal; nonlinear optical response; thermalization; optical limiting

资金

  1. Science and Engineering Research Board [CRG/2019/002808]
  2. DAE BRNS [37(3)/14/26/2016-BRNS/37245]
  3. FIST Project for Department of Physics
  4. CSIR [09/1020(0089)/2016-EMR-I]
  5. Science and Engineering Research Board, Government of India [CRG/2019/001028]

向作者/读者索取更多资源

This study experimentally demonstrates the carrier-induced sign reversal of the ultrafast third-order nonlinear optical response in few-layer ReS2 nanoflakes. By controlling the thermalization time of the carriers, the transition from saturable absorption to reverse saturable absorption is achieved. The results suggest that few-layer ReS2 can be used as a high-performance optical limiter material.
ReS2, a layered transition metal dichalcogenide (TMD) with reduced crystal symmetry exhibiting unique anisotropic and layer-independent properties, holds great potential for optoelectronic and photonic applications. Despite a flurry of research activities in the third-order nonlinear optical response of TMDs, tuning those properties in a completely reversible manner in real time is a challenge and remains largely unexplored. Here, we experimentally demonstrate band edge carrier-induced sign reversal of the ultrafast third-order nonlinear optical response in few-layer (4-8) ReS2 nanoflakes. In particular, saturable absorption observed before hot carrier thermalization (<0.3 ps) is tuned to reverse saturable absorption (RSA) after the carrier thermalized (>0.6 ps) at the band edge and defects using a single-color pump-probe intensity scan (I-scan) technique. RSA in our experiment is due to the two-step two single-photon absorption of the long-lived (similar to 1000s of ps from our ultrafast transient absorption) carriers at the band edges and defects. Motivated by the results, a liquid cell-based high-performance few-layer ReS2 optical limiter is fabricated with a remarkable 0.1 GW/cm(2) onset threshold and 0.64 limiting differential transmittance better than the other optical-limiting materials. These results offer a direction to manipulate the nonlinear optical response of materials which otherwise requires a large electric field, high intensity, or efficient charge transfer between donor and acceptor pairs.

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