Molecular beam epitaxy growth of high mobility InN film for high-performance broadband heterointerface photodetectors

III-Nitrides (III-N) heterojunction broadband photodetectors have attracted substantial attention in optoelectronic applications because of their large band tuneability from ultraviolet (UV) to near-infrared (NIR), high temperature, and high-power sustainability as compared to traditional semiconductor materials. InN is extensively studied as optoelectronic material in recent years due to its unique characteristics such as short bandgap, high electron mobility, and high sensitivity in the NIR region. The InN/GaN junction may exhibit exceptional optoelectmnic properties due to spontaneous and piezoelectric polarization at the interface. In this work, we fabricated high quality InN/GaN heterointerface with high electron mobility and incorporate it for high-performance broadband photodetector with a simple InN/GaN heterostructure. As a result, a high responsivity of 37.07 A/W, and a specific detectivity of 1.82 x 10(13) Jones at 50 mu Wcm(-2) are calculated. The results are verified numerically with Technology Computer-Aided Design (TCAD) software which is comparable with experimental measurements. The proposed InN/GaN can be a potential candidate for the future broadband photodetector market.

Automated summary

III-Nitrides (III-N) heterojunction broadband photodetectors have attracted substantial attention in optoelectronic applications due to their large band tuneability, high temperature, and high-power sustainability. In this study, high-quality InN/GaN heterointerfaces were fabricated, and a high-performance broadband photodetector with high responsivity and specific detectivity was achieved.