期刊
ISCIENCE
卷 25, 期 3, 页码 -出版社
CELL PRESS
DOI: 10.1016/j.isci.2022.103835
关键词
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资金
- National Natural Science Foundation of China [22025303, 21905210]
- Sino-German Center for Research Promotion [1400]
This article provides an overview of the structures, properties, and synthesis strategies of ultrathin III-V semiconductors, with a focus on space confinement, atomic substitution, adhesion energy regulation, and epitaxial growth. The current challenges and future development directions of ultrathin III-V semiconductors are also summarized.
Ultrathin III-V semiconductors have been receiving tremendous research interest over the past few years. Owing to their exotic structures, excellent physical and chemical properties, ultrathin III-V semiconductors are widely applied in the field of electronics, optoelectronics, and solar energy. However, the strong chemical bonds in layers are the bottleneck of the two-dimensionalization preparation process, which hinders the further development of ultrathin III-V semiconductors. Some effective methods to synthesize ultrathin III-V semiconductors have been reported recently. In this perspective, we briefly introduce the structures and properties of ultrathin III-V semiconductors firstly. Then, we comprehensively summarize the synthetic strategies of ultrathin III-V semiconductors, mainly focusing on space confinement, atomic substitution, adhesion energy regulation, and epitaxial growth. Finally, we summarize the current challenges and propose the development directions of ultrathin III-V semiconductors in the future.
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