4.7 Article

Enhanced Thermoelectric Performance in SmMg2Bi2 via Ca-Alloying and Ge-Doping

期刊

ACS APPLIED ENERGY MATERIALS
卷 5, 期 4, 页码 5182-5190

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsaem.2c00529

关键词

thermoelectric; SmMg2Bi2; Ge-doping; lattice thermal conductivity; carrier concentration

资金

  1. National Natural Science Foundation of China [11874356, U21A2054, 52071041, 51772035]
  2. Key Research Program of Frontier Sciences, CAS [QYZDB-SSW-SLH016]
  3. Project for Fundamental and Frontier Research in Chongqing [cstc2019jcyjjqX0002]

向作者/读者索取更多资源

In this paper, enhanced thermoelectric performance was achieved in SmMg2Bi2 by Ca-alloying and Ge-doping. The introduction of point defects by alloying Ca reduces the lattice thermal conductivity, while Ge doping increases the hole concentration and improves the power factor. The optimized sample showed significant enhancement in thermoelectric properties.
Zintl phase compounds with a CaAl2Si2 structure are promising thermoelectric materials. In this paper, enhanced thermoelectric performance was achieved in SmMg2Bi2, a new member of AB2X2 compounds, via Ca-alloying and Ge-doping. The introduction of point defects by alloying Ca on the Sm site significantly reduces the lattice thermal conductivity, and the lowest value was achieved when the Sm/Ca molar ratio is 1:1. Doping Ge on the Bi site increases the hole concentration of the material, which successfully suppresses the bipolar effect and significantly improves the power factor (PF) in the whole temperature range. Due to the decrease of thermal conductivity and the increase of PF over 323-873 K, the peak zT value of Sm0.5Ca0.5Mg2.15Bi1.99Ge0.01 reached 0.71 at 873 K and the zTave approached 0.44, about 51 and 47% enhancement compared with the pristine sample, respectively. This work provides a thermoelectric performance optimization strategy that can be used for other AB2X2 compounds.

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