4.6 Article

Orbital selective switching of ferromagnetism in an oxide quasi two-dimensional electron gas

期刊

NPJ QUANTUM MATERIALS
卷 7, 期 1, 页码 -

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NATURE PORTFOLIO
DOI: 10.1038/s41535-022-00448-4

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资金

  1. ERA-NET QUANTERA European Union's Horizon H2020 project QUANTOX [731473]
  2. Ministero dell'Istruzione, dell'Universita e della Ricerca (MIUR) [PRIN 20177SL7HC, PRIN 201011-OXIDE]
  3. EU COST program [CA16218]
  4. German Research Foundation (DFG) [CRC/TRR80, 107745057, CRC1242, 278162697]
  5. Leibniz Rechenzentrum Garching [pr87ro]
  6. supercomputer magnitUDE (DFG grants) [INST 20876/209-1 FUGG, INST 20876/243-1 FUGG]

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This study investigates the multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs). The filling of titanium-bands in the EuTiO3 layer and at the interface with SrTiO3 induces a switching of the exchange interaction between Eu-4f(7) magnetic moments. The results explain the observed ferromagnetic correlations and anomalous Hall effect in this q2DEG.
Multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs) triggers intriguing phenomena not observed in bulk materials, such as unconventional superconductivity and magnetism. Here, we investigate the mechanism of orbital selective switching of the spin-polarization in the oxide q2DEG formed at the (001) interface between the LaAlO3, EuTiO3 and SrTiO3 band insulators. By using density functional theory calculations, transport, magnetic and x-ray spectroscopy measurements, we find that the filling of titanium-bands with 3d(xz)/3d(yz) orbital character in the EuTiO3 layer and at the interface with SrTiO3 induces an antiferromagnetic to ferromagnetic switching of the exchange interaction between Eu-4f(7) magnetic moments. The results explain the observation of the carrier density-dependent ferromagnetic correlations and anomalous Hall effect in this q2DEG, and demonstrate how combined theoretical and experimental approaches can lead to a deeper understanding of emerging electronic phases and serve as a guide for the materials design of advanced electronic applications.

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