期刊
NPJ 2D MATERIALS AND APPLICATIONS
卷 6, 期 1, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/s41699-022-00302-y
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资金
- H2020 Graphene Flagship Core 3 [881603]
This study demonstrates a GaAs FET with a monolayer graphene gate, where the threshold voltage can be externally controlled by an additional control gate. The graphene gate forms a Schottky junction with the transistor channel, allowing for modulation of channel conductivity and threshold voltage control.
The threshold voltage of a field-effect transistor (FED determines its switching and limits the scaling of the supply voltage in the logic gates. Here we demonstrate a GaAs FET with a monolayer graphene gate in which the threshold voltage was externally controlled by an additional control gate. The graphene gate forms a Schottky junction with the transistor channel, modulating the channel conductivity. The control gate sets the work function of the graphene gate, controlling the Schottky barrier height and therefore the threshold voltage, and reduces the subthreshold swing down to similar to 60 mV dec(-1). The change of the threshold voltage was large enough to turn the initially depletion mode FETs into the enhancement mode FETs. This allowed to realize logic gates with a positive switching threshold in which the threshold voltage of each transistor was independently set. The presented FETs can also be operated as dual-gate FETs, which was demonstrated by realizing frequency mixers.
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