4.8 Article

Over 24% efficient MA-free CsxFA1-xPbX3 perovskite solar cells

期刊

JOULE
卷 6, 期 6, 页码 1344-1356

出版社

CELL PRESS
DOI: 10.1016/j.joule.2022.05.002

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资金

  1. National Natural Science Foundation of China [21872080]
  2. State Key Laboratory of Power System and Generation Equipment [SKLD21Z03, SKLD20M03]
  3. Chinese Thousand Talents Program for Young Professionals
  4. National Bio Energy Co., Ltd. [52789922000D]
  5. China Huaneng Group Co., Ltd. [HNKJ20-H88]
  6. China Postdoctoral Science Foundation [043240004]
  7. International Postdoctoral Exchange Fellowship Program (Talent-Introduction Program) [YJ20190164]
  8. State Grid Corporation of China

向作者/读者索取更多资源

In this study, CsFA films with high quality were fabricated using innovative morphology engineering method, which combines solution deposition and vacuum evaporation. The CsFA-based perovskite solar cells demonstrated excellent thermal stability and high power conversion efficiency, making them a promising candidate for applications in solar energy conversion.
Methylammonium (MA)-free perovskites such as Cs(x)FA(1-x)PbX(3) (CsFA) show excellent thermal stability, favoring their use in perovskite solar cells (PSCs). However, the power conversion efficiency (PCE) of CsFA lags behind that of MA-containing formulations due to the difficulty in controlling the film morphology. Herein, we report innovative morphology engineering using solution deposition of a mixture of CsBr, Pbl(2), and PbCl2 followed by vacuum evaporation of formamidinium iodide (FAI) to fabricate CsFA films. The introduction of a chloride precursor leads to larger grain sizes, forming a high-quality CsFA film under annealing. This enables the realization of robust CsFA-based PSCs with the highest reported PCE up to 24.1% (certified 23.9%) for 0.1 cm(2) and 22.8% for 1 cm(2) devices. Moreover, the unencapsulated evaporation device shows excellent stability with negligible efficiency decline after 20,000 h of storage in dry air or 1,000 h of exposure to 50% humidity, which is much better than the device prepared using the solution procedure.

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