4.8 Article

Countdown to perovskite space launch: Guidelines to performing relevant radiation-hardness experiments

期刊

JOULE
卷 6, 期 5, 页码 1015-1031

出版社

CELL PRESS
DOI: 10.1016/j.joule.2022.03.004

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资金

  1. U.S. Department of Energy (DOE) [DE-AC36-08GO28308]
  2. Operational Energy Capability Improvement Fund (OECIF) of the U.S. Department of Defense (DOD)
  3. National Aeronautics and Space Administration [80NM0018D0004]
  4. NSF [HBCU-EiR-2101181]
  5. Space Solar Power Project at Caltech
  6. Early Career Initiative Program within NASA's Space Technology Mission Directorate
  7. NASA through NASA Oklahoma EPSCoR [80NSSC19M0140]

向作者/读者索取更多资源

Perovskite photovoltaics have great potential in terrestrial and space energy production, but their radiation tolerance needs to be analyzed. This article presents guidelines for rigorously testing the radiation tolerance of perovskite photovoltaics.
Perovskite photovoltaics (PVs) are under intensive development for promise in terrestrial energy production. Soon, the community will find out how much of that promise may become reality. Perovskites also open new opportunities for lower cost space power. However, radiation tolerance of space environments requires appropriate analysis of relevant devices irradiated under representative radiation conditions, We present guidelines designed to rigorously test the radiation tolerance of perovskite PVs. We review radiation conditions in common orbits, calculate nonionizing and ionizing energy losses (NIEL and I EL) for perovskites, and prioritize proton radiation for effective nuclear interactions. Low-energy protons (0.05-0.15 MeV) create a representative uniform damage profile, whereas higher energy protons (commonly used in ground-based evaluation) require significantly higher fluence to accumulate the equivalent displacement damage dose due to lower scattering probability. Furthermore, high-energy protons may heal devices through increased electronic ionization. These procedural guidelines differ from those used to test conventional semiconductors.

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