Industrially microfabricated ion trap with 1 eV trap depth

Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric three-dimensional (3D) structures enable high trap depth, but microfabrication techniques are generally better suited to planar structures that produce less ideal conditions for trapping. We present an ion trap fabricated on stacked eight-inch wafers in a large-scale micro-electro-mechanical system microfabrication process that provides reproducible traps at a large volume. Electrodes are patterned on the surfaces of two opposing wafers bonded to a spacer, forming a 3D structure with 2.5 mu m standard deviation in alignment across the stack. We implement a design achieving a trap depth of 1 eV for a Ca-40(+) ion held at 200 mu m from either electrode plane. We characterize traps, achieving measurement agreement with simulations to within +/- 5% for mode frequencies spanning 0.6-3.8 MHz, and evaluate stray electric field across multiple trapping sites. We measure motional heating rates over an extensive range of trap frequencies, and temperatures, observing 40 phonons/s at 1 MHz and 185 K. This fabrication method provides a highly scalable approach for producing a new generation of 3D ion traps.

Automated summary

This study presents a highly scalable approach for fabricating a new generation of 3D ion traps using stacked wafers. The traps achieved a significant trapping depth and were characterized and evaluated comprehensively. This fabrication method has the potential to advance trapped-ion quantum computing.