4.3 Article

First- and second-order Raman spectroscopy of monoclinic β-Ga2O3

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Applied

Growth of bulk β-Ga2O3 single crystals by the Czochralski method

Zbigniew Galazka

Summary: This Tutorial provides a detailed description of the critical aspects of bulk beta-Ga2O3 single crystal growth using the Czochralski method. It covers the thermodynamics of Ga2O3, comprehensive solutions for crystal size scale-up, the impact of free carrier absorption on growth stability, and important factors such as crystal growth direction and intentional doping. The resulting crystals' structural quality and basic physical properties are also discussed.

JOURNAL OF APPLIED PHYSICS (2022)

Article Physics, Applied

Resonant electronic Raman scattering from Ir4+ ions in β-Ga2O3

Palvan Seyidov et al.

Summary: We report the observation of resonant electronic Raman scattering (ERS) from Ir4+ ions in bulk beta-Ga2O3 crystals. The ERS efficiency is found to strongly depend on the photon energy used for optical excitation and the enhancement mechanism at around 2.9 eV is explained.

JOURNAL OF APPLIED PHYSICS (2022)

Article Physics, Condensed Matter

Raman and photoluminescence properties of un-/ion-doped β-Ga2O3 single-crystals prepared by edge-defined film-fed growth method

Kun Zhang et al.

Summary: In this study, beta-Ga2O3 single crystals with different orientations and dopants are synthesized using the EFG method. The effects of doping on vibration modes frequencies are analyzed using Raman spectroscopy, while the emission characteristics in PL spectroscopy show different behavior based on the type of dopant used.

PHYSICA B-CONDENSED MATTER (2021)

Article Chemistry, Physical

Temperature-dependent Raman and photoluminescence of β-Ga2O3 doped with shallow donors and deep acceptors impurities

Kun Zhang et al.

Summary: Ion doping technology with precise control of doping concentration and configuration can optimize the performance of beta-phase gallium oxide (beta-Ga2O3) high-power electronic and optoelectronic devices. By separately doping shallow-donor Si and deep-acceptor Mg impurities in beta-Ga2O3 using the EFG method, the study found that the Si-doped sample has higher stability at different temperatures, while the local atomic configurations of Mg impurities can be more easily/significantly affected by temperature. The research provides valuable insights for the application of ion-doped beta-Ga2O3 optoelectronic devices.

JOURNAL OF ALLOYS AND COMPOUNDS (2021)

Review Crystallography

Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides

Zbigniew Galazka et al.

Summary: The development of transparent semiconducting oxides (TSOs) involves studying the growth and physical properties of bulk single crystals of ultra-wide bandgap (UWBG) TSOs, such as beta-Ga2O3 and Ga-based spinels, which can be used in electronic and optoelectronic devices. UWBG TSOs have high transparency and optical bandgaps, functioning as electrical insulators, n-type semiconductors, or n-type degenerate semiconductors with varying electron concentrations. Researchers have explored methods to grow bulk single crystals with different properties and applications in mind.

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS (2021)

Article Materials Science, Multidisciplinary

Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains

Benjamin M. Janzen et al.

Summary: Gallium oxide (Ga2O3) is a wide bandgap material with potential applications in power electronics and photodetectors. The orthorhombic kappa phase is of particular interest for its ferroelectric behavior and potential for high-quality electron gases. Investigation into the phonon modes of the material provides insights into its crystal structure and vibrational properties.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

Article Materials Science, Multidisciplinary

Isotopic study of Raman active phonon modes in β-Ga2O3

Benjamin M. Janzen et al.

Summary: The study investigates the phonon modes of beta-Ga2O3 in different oxygen isotope compositions and reveals that the substitution of oxygen isotopes affects the Raman frequencies. By conducting experiments and theoretical calculations, the study identifies the atomistic origin of Raman modes and presents a blueprint for future identification of different point defects in Ga2O3 using Raman spectroscopy.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

Article Physics, Applied

Raman scattering in heavily donor doped β-Ga2O3

A. Fiedler et al.

APPLIED PHYSICS LETTERS (2020)

Article Computer Science, Interdisciplinary Applications

The PSEUDODOJO: Training and grading a 85 element optimized norm-conserving pseudopotential table

M. J. van Setten et al.

COMPUTER PHYSICS COMMUNICATIONS (2018)

Article Materials Science, Multidisciplinary

Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method

Zbigniew Galazka et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)

Article Physics, Multidisciplinary

Raman Tensor Formalism for Optically Anisotropic Crystals

Christian Kranert et al.

PHYSICAL REVIEW LETTERS (2016)

Article Multidisciplinary Sciences

Raman tensor elements of β-Ga2O3

Christian Kranert et al.

SCIENTIFIC REPORTS (2016)

Article Materials Science, Multidisciplinary

Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals

M. Schubert et al.

PHYSICAL REVIEW B (2016)

Article Materials Science, Multidisciplinary

Quasiparticle bands and spectra of Ga2O3 polymorphs

J. Furthmueller et al.

PHYSICAL REVIEW B (2016)

Article Physics, Applied

Lattice thermal conductivity in β-Ga2O3 from first principles

Marco D. Santia et al.

APPLIED PHYSICS LETTERS (2015)

Article Physics, Condensed Matter

Brillouin zone and band structure of β-Ga2O3

Hartwin Peelaers et al.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)

Article Crystallography

On the bulk β-Ga2O3 single crystals grown by the Czochralski method

Zbigniew Galazka et al.

JOURNAL OF CRYSTAL GROWTH (2014)

Article Crystallography

Polarized Raman spectra in β-Ga2O3 single crystals

T. Onuma et al.

JOURNAL OF CRYSTAL GROWTH (2014)

Article Physics, Applied

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

K. Irmscher et al.

JOURNAL OF APPLIED PHYSICS (2011)

Article Crystallography

Czochralski growth and characterization of β-Ga2O3 single crystals

Z. Galazka et al.

CRYSTAL RESEARCH AND TECHNOLOGY (2010)

Review Physics, Condensed Matter

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

Paolo Giannozzi et al.

JOURNAL OF PHYSICS-CONDENSED MATTER (2009)

Article Physics, Applied

Lattice dynamical, dielectric, and thermodynamic properties of β-Ga2O3 from first principles

Bo Liu Mu Gu et al.

APPLIED PHYSICS LETTERS (2007)

Article Physics, Condensed Matter

Structures and energetics of Ga2O3 polymorphs

S. Yoshioka et al.

JOURNAL OF PHYSICS-CONDENSED MATTER (2007)

Article Physics, Applied

First and second order Raman scattering spectroscopy of nonpolar a-plane GaN

Haiyong Gao et al.

JOURNAL OF APPLIED PHYSICS (2007)

Article Materials Science, Multidisciplinary

High-pressure study of the β-to-α transition in Ga2O3

D Machon et al.

PHYSICAL REVIEW B (2006)

Article Physics, Condensed Matter

First principles study on electronic structure of β-Ga2O3

K Yamaguchi

SOLID STATE COMMUNICATIONS (2004)

Article Materials Science, Multidisciplinary

First- and second-order Raman scattering in nanocrystalline silicon

P Mishra et al.

PHYSICAL REVIEW B (2001)