Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I-V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.

Automated summary

In this study, the resistive switching properties of HfO2 based 1T-1R memristive devices were modified by adding ultra-thin layers of Al2O3. Three different types of memristive stacks were fabricated and the switching properties were discussed in terms of forming voltages, low resistance state, high resistance state, and their variabilities. The experimental I-V characteristics of set and reset operations were evaluated using the quantum point contact model, and the properties of the conduction filament in the on and off states were discussed based on the model parameters obtained from the QPC fit.