A Figure of Merit for Selection of the Best Family of SiC Power MOSFETs

This paper proposes a criterion to select the best family of commercial SiC power metaloxide-semiconductor field-effect transistors (MOSFETs) that provides the highest quality and reliability. Applying a recently published integrated-charge method, a newly proposed figure of merit is correlated to the density of near-interface traps that degrade the quality and reliability of SiC MOS-FETs. The applicability of the proposed figure of merit is experimentally demonstrated with the most widely used and commercially available planar and trench MOSFETs from different manufacturers.

Automated summary

A criterion is proposed to select the best family of commercial SiC power MOSFETs based on a newly proposed figure of merit. This figure of merit is correlated to the density of near-interface traps that degrade the quality and reliability of SiC MOSFETs. The applicability of the proposed figure of merit is demonstrated experimentally with commonly used planar and trench MOSFETs from different manufacturers.