4.7 Article

Near-Infrared to Visible Light Converter by Integrating Graphene Transistor into Perovskite Quantum Dot Light Emitting Diodes

期刊

ADVANCED MATERIALS TECHNOLOGIES
卷 7, 期 8, 页码 -

出版社

WILEY
DOI: 10.1002/admt.202200043

关键词

perovskite; QLED; graphene transistor; near-infrared to visible light

资金

  1. National Key R&D program of China [2018YFA0703200]
  2. Dalian Science and Technology Innovation Fund of China [2019J11CY011]

向作者/读者索取更多资源

A light converter system with high light sensitivity has been reported, which can sense near-infrared (NIR) signals and convert them into visible light. The system consists of inverted perovskite quantum dot light emitting diodes and a hybrid lead sulfide quantum dots/graphene transistor, enabling the sensing and display of NIR images.
A light converter system with high light sensitivity that could sense the near-infrared (NIR) signal is one of the prerequisites for the whole Internet of Things (IoT) field. Here, a NIR to visible light converter (NVLC) which could emit visible light according to external NIR is reported. The NVLC is an integration of an inverted perovskite quantum dot light emitting diodes and a hybrid lead sulfide quantum dots/graphene transistor. The latter acts as a photodetector to convert NIR signals into electrical signals, and the former emits visible light with an intensity controlled by the electrical signals. The luminous intensity of the device, which emits green light with a peak of 520 nm, is positively correlated with the intensity of the NIR. Further, the micron-scale NVLCs are integrated into a matrix device that could sense NIR image and display it into visible light image. The NVLC with sensing, converting NIR to visible light is believed to have various promising applications in the IoT field.

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