Solution-Processed Hole-Doped SnSe Thermoelectric Thin-Film Devices for Low-Temperature Power Generation

Owing to the increase in the demand for energy autonomy in electronic systems, there has been increased research interest in thermoelectric thin-film-based energy harvesters. However, the fabrication of such devices is challenging when considering material performance and integration processes. SnSe has emerged as among the best bulk thermoelectric materials capable of functioning at high temperatures; however, the thermoelectric performance of thin films is still limited. Herein, we present a solution-processed fabrication of high-performance Ag-doped SnSe thin films operable in a low-temperature range. The Ag doping induces the preferred crystallographic orientation and grain growth in the b-c plane (in-plane) of SnSe, consequently enhancing thermoelectric performance at low temperatures. Moreover, thin-film wrinkling and photolithography are employed in the fabrication of stretchable and patterned devices, in which power generation performance is then evaluated, thereby demonstrating the feasibility of the proposed thin films as an energy harvester in emerging electronic systems.

Automated summary

This paper presents a solution-processed fabrication of high-performance Ag-doped SnSe thin films operable in a low-temperature range. The Ag doping induces preferred crystallographic orientation and grain growth in SnSe, resulting in enhanced thermoelectric performance at low temperatures. Additionally, stretchable and patterned devices were fabricated using thin-film wrinkling and photolithography techniques, and their power generation performance was evaluated, demonstrating the feasibility of the proposed thin films as energy harvesters in emerging electronic systems.