Oxidation-resistant Cu-based metallisation for Si solar cells

Herein, the oxidation resistance effect of B on the high-temperature sintering of Cu-based metallisation for crystalline Si solar cells is described. Atmospheric sintering of B-containing Cu-Ag core-shell paste printed on a Si wafer is performed at high temperatures (up to 800 degrees C). The oxidation of Cu is effectively prevented by B, affording a brown bulky Cu-Ag film with low electrical resistivity (order of 10(-6) omega cm). The Cu-Ag film formation is monitored via microscopic and crystallographic analyses. The Cu-Ag film exhibits increased electrical conductivity with increasing B content from 0 to 5 wt.%. X-ray photoelectron spectroscopy data reveal that the B2O3 formed on the Cu-Ag film surface prevents external oxygen diffusion into the bulk. The developed paste is applied to a crystalline Si solar cell, affording a maximum efficiency of 17.55%. These results show the practical applicability of Cu-based electrodes in the solar cell industry.

Automated summary

The addition of element B in the high-temperature sintering process effectively prevents the oxidation of copper, leading to the formation of a high-conductivity Cu-Ag film. The practical applicability of copper-based electrodes in crystalline Si solar cells is demonstrated by achieving a maximum efficiency of 17.55%.