Characterization of V2O3 Nanoscale Thin Films Prepared by DC Magnetron Sputtering Technique

Vanadium sesquioxide V2O3, a transition metal oxide, is an important metal transition insulator due to its potential applications in novel electronic and memory devices. V2O3 thin films of thickness around 230 nm were grown on Si/SiO2/Ti/Pt substrates at deposition temperature of 723 K in a controlled Ar:O-2 atmosphere of 35:2.5 sccm employing Direct Current (DC) magnetron sputtering. X-ray diffraction studies confirmed single phase of the material stabilized in corundum rhombohedral R3 over bar C phase. X-ray photoelectron spectroscopic results revealed chemical oxidation states are of V3+ and O2- and have nearly stochiometric elemental compositions in the films. Magnetization studies down to 10 K predicts a canted antiferromagnetic transition around 55 K. Out of 7 expected Raman active modes (2A(1g) + 5Eg), two A(1g) Raman active modes at 242 and 500 cm(-1) were observed at ambient R (3) over barC phase. Temperature dependent Raman spectroscopic studies carried out from 80 to 300 K identified a monoclinic to rhombohedral phase transition at similar to 143 K.

Automated summary

Vanadium sesquioxide (V2O3) is an important transition metal oxide with potential applications in electronic and memory devices. Thin films of V2O3 were successfully deposited on Si/SiO2/Ti/Pt substrates, exhibiting good crystallinity and composition. The films also showed interesting magnetic behavior at low temperatures. Raman spectroscopy studies provided further insights into the phase transition.