Comparative investigation into key optoelectronic characteristics of semipolar InGaN blue laser diodes: A strategy to mitigate quantum-confine stark effect

In recent years, semipolar InGaN-based blue laser diodes (LDs) have raised indescribable appeal within solidstate lighting industry as promising alternatives for currently available polar c-plane LDs due to reduction in internal polarization field and related quantum-confined stark effect. However, any comparative study in terms of energy band gap, optical emission profile, power output (P) and forward bias response (I-V) etc. between semipolar-oriented InGaN blue LDs is inherently unattainable. This work aims to demonstrate the impact of internal polarization field on aforementioned key optoelectronic parameters of In0.17Ga0.83N/GaN double quantum well (DQW) blue LD along semipolar (1012), (1122), (1011), (2021), (3031), (2021) and (1011) crystal orientations by figuring out six-band k.p Hamiltonian at the brillouin zone center aided from Euler's tensor transformation method. Three-level rate equations based LD analogous circuit model and state-space matrix are employed here to obtain P-I-V and frequency characteristics. Radiative as well as non-radiative recombination mechanisms for LD systems are portrayed by addressing modified ABC model. Our numerical investigation illustrates that best hole effective mass, optical gain, lasing power, threshold current and forward voltage can be attained from (1122)-oriented InGaN blue LD due to insignificant presence of spontaneous plus piezoelectric (PZ) polarization charge. In addition with these, the inspection of bode plot and relevant optical power gain (dB) confirms the stability and superiority of this semipolar blue LD system for achieving high-speed visible-light communications at relatively low current densities.

Automated summary

Semipolar InGaN-based blue laser diodes (LDs) have gained significant attention in the solid-state lighting industry due to their reduction in internal polarization field and related quantum-confined stark effect. However, a comparative study among different semipolar-oriented InGaN blue LDs in terms of energy band gap, optical emission profile, power output, and forward bias response is currently unattainable. This study aims to investigate the impact of internal polarization field on the optoelectronic parameters of InGaN blue LDs along different crystal orientations and demonstrates the superiority of the (1122)-oriented InGaN blue LD for high-speed visible-light communications.