Soliton frequency comb generation in CMOS-compatible silicon nitride microresonators

The monolithic integration of soliton microcomb devices with active photonic components and high-frequency electronics is highly desirable for practical applications. Among many materials, silicon nitride (SiNx) waveguide layers prepared by low-pressure chemical vapor deposition (LPCVD) have been the main platform for on-chip optical frequency comb generation. However, the high temperatures involved in LPCVD render it incompatible as a back-end process with complementary metal oxide semiconductor (CMOS) or active III-V compound semiconductor fabrication flows. We report the generation of coherent soliton frequency combs in micro-ring resonators fabricated in deuterated silicon nitride (SiNx:D) waveguides with a loss of 0.09 dB/cm. Deposited at 270 degrees C by an inductance-coupled plasma chemical vapor deposition (ICP-CVD) process, the material preparation and fabrication flow are fully CMOS-compatible. These results enable the integration of silicon-nitride-based optical combs and photonic integrated circuits (PICs) on prefabricated CMOS and/or III-V substrates, therefore marking a major step forward in SiNx photonic technologies. (C) 2022 Chinese Laser Press

Automated summary

The research reports the successful generation of coherent soliton frequency combs in micro-ring resonators fabricated in deuterated silicon nitride waveguides with a loss of 0.09 dB/cm. The material preparation and fabrication process using inductance-coupled plasma chemical vapor deposition are fully CMOS-compatible, marking a significant advancement in silicon nitride photonic technologies.