期刊
PHOTONICS RESEARCH
卷 10, 期 6, 页码 1338-1343出版社
CHINESE LASER PRESS
DOI: 10.1364/PRJ.455969
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资金
- National Science Foundation [2023775]
- Air Force Office of Scientific Research [FA 9550-17-1-0071]
- Defense Advanced Research Projects Agency [HR0011-20-C-0137]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [2023775] Funding Source: National Science Foundation
This study demonstrates the integration of high-bandwidth and high-responsivity photodiodes on the lithium niobate on insulator (LNOI) platform, filling the gap of high-speed photodetectors on LNOI.
Lithium niobate on insulator (LNOI) has become an intriguing platform for integrated photonics for applications in communications, microwave photonics, and computing. Whereas, integrated devices including modulators, resonators, and lasers with high performance have been recently realized on the LNOI platform, high-speed photodetectors, an essential building block in photonic integrated circuits, have not been demonstrated on LNOI yet. Here, we demonstrate for the first time, heterogeneously integrated modified uni-traveling carrier photodiodes on LNOI with a record-high bandwidth of 80 GHz and a responsivity of 0.6 A/W at a 1550-nm wavelength. The photodiodes are based on an n-down InGaAs/InP epitaxial layer structure that was optimized for high carrier transit time-limited bandwidth. Photodiode integration was achieved using a scalable wafer die bonding approach that is fully compatible with the LNOI platform. (C) 2022 Chinese Laser Press
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