The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity

In this paper, the behavior of exciton radiative recombination in a GaN-based triangular-like ridge cavity is studied at room-temperature. The triangular-like ridge cavity is fabricated on a standard-blue-LED epitaxial wafer grown on a sapphire substrate. Through the photoluminescence (PL) and time-resolved photoluminescence (TR-PL) measurements, a clear modulation of the original spontaneous emission is found in the microcavity, a new transition channel is observed, and the effect is angle-dependent. Furthermore, by changing the tilt angle during angle-resolution photoluminescence (AR-PL), it is found that the coupling between excitons and photons in the cavity is the strongest when tilted at 10 degrees. By simulation, the strong localization of photons in the top of the cavity can be confirmed. The PL, TR-PL, and AR-PL results showed the sign of the exciton-photon coupling in the triangular-like ridge cavity.

Automated summary

This paper investigates the behavior of exciton radiative recombination in a GaN-based triangular-like ridge cavity at room temperature. The results show a clear modulation of the spontaneous emission and the presence of a new transition channel in the microcavity, with the effect depending on the angle. Furthermore, changing the tilt angle reveals that the coupling between excitons and photons is strongest at a tilt angle of 10 degrees.