Wafer-Scale Growth of Fe-Doped Hexagonal Boron Nitride (hBN) Films via Co-Sputtering

Fe-doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe-doped hBN films and their material properties are crucial for application in devices. In this work, Fe-doped films with 2-inch wafer scale were fabricated by magnetron co-sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe-doped film was 0.34 K Omega/sqr. Meanwhile, the Fe-doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.

Automated summary

Fe-doped hBN films with 2-inch wafer scale were successfully fabricated in this study. Although the crystal quality decreased, the electrical performance was greatly improved. The Fe-doped films retained the characteristics of hBN and exhibited a higher absorption wavelength and optical band gap.