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Electron mobility in monoclinic -Ga2O3Effect of plasmon-phonon coupling, anisotropy, and confinement
Krishnendu Ghosh et al.
JOURNAL OF MATERIALS RESEARCH (2017)
Fundamental limits on the electron mobility of β-Ga2O3
Youngho Kang et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2017)
Opportunities and Future Directions for Ga2O3
Michael A. Mastro et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
Stephen A. O. Russell et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2017)
Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices
Adam T. Neal et al.
SCIENTIFIC REPORTS (2017)
Thermodynamic Studies of ß-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate
Hong Zhou et al.
ACS OMEGA (2017)
ß-Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
Mengwei Si et al.
ACS OMEGA (2017)
Depletion-mode vertical Ga2O3 trench MOSFETs fabricated using Ga2O3 homoepitaxial films grown by halide vapor phase epitaxy
Kohei Sasaki et al.
APPLIED PHYSICS EXPRESS (2017)
Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors
Gwangseok Yang et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
Hong Zhou et al.
APPLIED PHYSICS LETTERS (2017)
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
Sriram Krishnamoorthy et al.
APPLIED PHYSICS LETTERS (2017)
Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy
Elaheh Ahmadi et al.
APPLIED PHYSICS EXPRESS (2017)
Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor
Janghyuk Kim et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
Neil A. Moser et al.
APPLIED PHYSICS LETTERS (2017)
Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain
Man Hoi Wong et al.
APPLIED PHYSICS EXPRESS (2017)
Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Elaheh Ahmadi et al.
APPLIED PHYSICS EXPRESS (2017)
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
Keita Konishi et al.
APPLIED PHYSICS LETTERS (2017)
Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics
Qiming He et al.
APPLIED PHYSICS LETTERS (2017)
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
Michele Baldini et al.
JOURNAL OF MATERIALS SCIENCE (2016)
Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition
Fabi Zhang et al.
APPLIED PHYSICS LETTERS (2016)
Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling
Man Hoi Wong et al.
APPLIED PHYSICS LETTERS (2016)
Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors
Shihyun Ahn et al.
APPLIED PHYSICS LETTERS (2016)
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Kelson D. Chabak et al.
APPLIED PHYSICS LETTERS (2016)
Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n--Ga2O3 drift layers grown by halide vapor phase epitaxy
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2016)
Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
Man Hoi Wong et al.
IEEE ELECTRON DEVICE LETTERS (2016)
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped β-Ga2O3 MOSFETs
Andrew J. Green et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Conduction mechanism in highly doped β-Ga2O3((2)over-bar01) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes
Toshiyuki Oishi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Current status of Ga2O3 power devices
Masataka Higashiwaki et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
Man Hoi Wong et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity
X. C. Guo et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2016)
Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics
Janghyuk Kim et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2016)
Communication-A (001) beta-Ga2O3 MOSFET with+2.9 V Threshold Voltage and HfO2 Gate Dielectric
Marko J. Tadjer et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2016)
High-mobility β-Ga2O3((2)over-bar01) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
Toshiyuki Oishi et al.
APPLIED PHYSICS EXPRESS (2015)
Anomalous Fe diffusion in Si-ion-implanted β-Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers
Man Hoi Wong et al.
APPLIED PHYSICS LETTERS (2015)
Mist-CVD Grown Sn-Doped α-Ga2O3 MESFETs
Giang T. Dang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD
Xuejian Du et al.
JOURNAL OF MATERIALS SCIENCE (2015)
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
Wan Sik Hwang et al.
APPLIED PHYSICS LETTERS (2014)
4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination
Yuan Hao et al.
CHINESE PHYSICS B (2014)
High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications
Chen Wan-Jun et al.
CHINESE PHYSICS B (2014)
Development of gallium oxide power devices
Masataka Higashiwaki et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology
Daoyou Guo et al.
OPTICAL MATERIALS EXPRESS (2014)
Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts
Kohei Sasaki et al.
APPLIED PHYSICS EXPRESS (2013)
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2013)
Ga2O3 Schottky Barrier Diodes Fabricated by Using Single-Crystal β-Ga2O3 (010) Substrates
Kohei Sasaki et al.
IEEE ELECTRON DEVICE LETTERS (2013)
MBE grown Ga2O3 and its power device applications
Kohei Sasaki et al.
JOURNAL OF CRYSTAL GROWTH (2013)
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2012)
Beakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates
Qiao Ming et al.
CHINESE PHYSICS B (2012)
Field-Plate-Terminated 4H-SiC Schottky Diodes Using Al-Based High-k Dielectrics
Amit S. Kumta et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Heteroepitaxy of corundum-structured alpha-Ga2O3 thin films on alpha-Al2O3 substrates by ultrasonic mist chemical vapor deposition
Daisuke Shinohara et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
First-principles study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases
Haiying He et al.
PHYSICAL REVIEW B (2006)
An assessment of wide bandgap semiconductors for power devices
JL Hudgins et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2003)
SiC and GaN transistors - Is there one winner for microwave power applications?
RJ Trew
PROCEEDINGS OF THE IEEE (2002)
Floating zone growth of β-Ga2O3:: A new window material for optoelectronic device applications
Y Tomm et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2001)
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