β-Ga2O3-Based Power Devices: A Concise Review

Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-generation wide bandgap semiconductor, owing to its natural physical and chemical properties. In this review article, we selectively summarized the recent advances on the experimental and theoretical demonstration of beta-Ga2O3-based power devices, including Schottky barrier diodes and field-effect transistors, aiming for an inherent comprehending of the operating mechanisms, discussion on the obstacles to be addressed, and providing some comprehensive guidance for further developments. In the short run, Ga2O3 may well be promising to lead power electronics.

Automated summary

This review article summarizes recent advances in the experimental and theoretical research on β-Ga2O3-based power devices, providing comprehensive guidance for further development by discussing the operating mechanisms and obstacles to be addressed.