相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Modulating the blue and green luminescence in the β-Ga2O3 films
Yiyin Nie et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2022)
Impurity band conduction in Si-doped β-Ga2O3 films
Anil Kumar Rajapitamahuni et al.
APPLIED PHYSICS LETTERS (2021)
-Ga2O3
Sushrut Modak et al.
AIP ADVANCES (2021)
Electron beam probing of non-equilibrium carrier dynamics in 18MeV alpha particle- and 10MeV proton-irradiated Si-doped β-Ga2O3 Schottky rectifiers
Sushrut Modak et al.
APPLIED PHYSICS LETTERS (2021)
Experimental estimation of electron-hole pair creation energy in β-Ga2O3
E. B. Yakimov et al.
APPLIED PHYSICS LETTERS (2021)
Zn acceptors in β-Ga2O3 crystals
T. D. Gustafson et al.
JOURNAL OF APPLIED PHYSICS (2021)
Self-trapped hole and impurity-related broad luminescence in β-Ga2O3
Y. K. Frodason et al.
JOURNAL OF APPLIED PHYSICS (2020)
Ultrafast dynamics of hole self-localization in β-Ga2O3
Saulius Marcinkevicius et al.
APPLIED PHYSICS LETTERS (2020)
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
Jiaye Zhang et al.
APL MATERIALS (2020)
Point defects in Ga2O3
Matthew D. McCluskey
JOURNAL OF APPLIED PHYSICS (2020)
Unusual conduction mechanism of n-type β-Ga2O3: A shallow donor electron paramagnetic resonance analysis
H. J. von Bardeleben et al.
JOURNAL OF APPLIED PHYSICS (2020)
Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3vertical rectifiers
E. B. Yakimov et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)
Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers
Sushrut Modak et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)
Observation of impurity band conduction and variable range hopping in heavily doped (010) β-Ga2O3
Zumrad Kabilova et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2019)
Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra
A. Y. Polyakov et al.
APPLIED PHYSICS LETTERS (2019)
Thermodynamic of intrinsic defects in β-Ga2O3
Xueli Wang et al.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2019)
Electron injection-induced effects in Si-doped β-Ga2O3
Sushrut Modak et al.
AIP ADVANCES (2019)
Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated β-Ga2O3 Schottky Rectifiers
Sushrut Modak et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)
Review-Theory and Characterization of Doping and Defects in β-Ga2O3
Marko J. Tadjer et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
J. Y. Tsao et al.
ADVANCED ELECTRONIC MATERIALS (2018)
Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length
Jonathan Lee et al.
APPLIED PHYSICS LETTERS (2018)
Optical signatures of deep level defects in Ga2O3
Hantian Gao et al.
APPLIED PHYSICS LETTERS (2018)
Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current
E. B. Yakimov et al.
JOURNAL OF APPLIED PHYSICS (2018)
A review of Ga2O3 materials, processing, and devices
S. J. Pearton et al.
APPLIED PHYSICS REVIEWS (2018)
Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3
A. Y. Polyakov et al.
APPLIED PHYSICS LETTERS (2018)
Modeling and interpretation of UV and blue luminescence intensity in beta-Ga2O3 by silicon and nitrogen doping
T. Onuma et al.
JOURNAL OF APPLIED PHYSICS (2018)
Incident wavelength and polarization dependence of spectral shifts in β-Ga2O3 UV photoluminescence
Yunshan Wang et al.
SCIENTIFIC REPORTS (2018)
Self-trapped holes in β-Ga2O3 crystals
B. E. Kananen et al.
JOURNAL OF APPLIED PHYSICS (2017)
Group-III Sesquioxides: Growth, Physical Properties and Devices
Holger von Wenckstern
ADVANCED ELECTRONIC MATERIALS (2017)
Emission properties of Ga2O3 nano-flakes: effect of excitation density
G. Pozina et al.
SCIENTIFIC REPORTS (2017)
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
Ekaterine Chikoidze et al.
MATERIALS TODAY PHYSICS (2017)
Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors
Gwangseok Yang et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
State-of-the-art technologies of gallium oxide power devices
Masataka Higashiwaki et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2017)
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
Keita Konishi et al.
APPLIED PHYSICS LETTERS (2017)
Choosing the correct hybrid for defect calculations: A case study on intrinsic carrier trapping in β-Ga2O3
Peter Deak et al.
PHYSICAL REVIEW B (2017)
Intrinsic electron mobility limits in β-Ga2O3
Nan Ma et al.
APPLIED PHYSICS LETTERS (2016)
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
Akito Kuramata et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Recent progress in Ga2O3 power devices
Masataka Higashiwaki et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals
T. Onuma et al.
APPLIED PHYSICS LETTERS (2013)
10 MeV electrons irradiation effects in variously doped n-GaN
A. Y. Polyakov et al.
JOURNAL OF APPLIED PHYSICS (2011)
Excitation and photoluminescence of pure and Si-doped β-Ga2O3 single crystals
Kiyoshi Shimamura et al.
APPLIED PHYSICS LETTERS (2008)
Visible and infrared luminescence study of Er doped β-Ga2O3 and Er3Ga5O12
E. Nogales et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2008)
Doping asymmetry in wide-bandgap semiconductors: Origins and solutions
Yanfa Yan et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2008)
A method of accurately determining the positions of the edges of depletion regions in semiconductor junctions
Vincent K. S. Ong et al.
JOURNAL OF APPLIED PHYSICS (2006)
Studies of minority carrier diffusion length increase in p-type ZnO:Sb
O. Lopatiuk-Tirpak et al.
JOURNAL OF APPLIED PHYSICS (2006)
Optical spectroscopy study on β-Ga2O3
EG Víllora et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2002)
Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices
L Chernyak et al.
APPLIED PHYSICS LETTERS (2000)