Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3

Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal-organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the V-Ga(-)-V-O(++) complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from V-Ga(-)-V-O(++) defect complexes.

Automated summary

Electron beam-induced current was used to measure the minority carrier diffusion length in p-Ga2O3 thin films grown through metal-organic chemical vapor deposition at temperatures ranging from 304 to 404 K. The diffusion length of electrons decreased as the temperature increased. Additionally, cathodoluminescence emission spectroscopy identified optical signatures of acceptor levels associated with the V-Ga(-)-V-O(++) defect complex. The activation energies for the decrease in diffusion length and the quenching of cathodoluminescence emission with increasing temperature were attributed to the thermal de-trapping of electrons from the V-Ga(-)-V-O(++) defect complexes.