4.8 Article

Dinaphthotetrathienoacenes: Synthesis, Characterization, and Applications in Organic Field-Effect Transistors

期刊

ADVANCED SCIENCE
卷 9, 期 19, 页码 -

出版社

WILEY
DOI: 10.1002/advs.202105674

关键词

dinaphthotetrathienoacenes; dynamic disorder; organic field-effect transistors; organic semiconductors; thienoacenes

资金

  1. European Union's Horizon 2020 Research and Innovation Program under the Marie Sklodowska-Curie Grant [811284]
  2. Belgian National Fund for Scientific Research (FNRS) [2.4565.11, T.0058.14, T.0072.18, 30489208, U.G001.19]
  3. Federation Wallonie-Bruxelles (ARC) [20061]
  4. Labex project CSC [ANR-10LABX-0026 CSC, ANR-10-IDEX-0002-02]
  5. International Center for Frontier Research in Chemistry
  6. Institut Universitaire de France (IUF)
  7. Marie Curie Actions (MSCA) [811284] Funding Source: Marie Curie Actions (MSCA)

向作者/读者索取更多资源

The charge transport of crystalline organic semiconductors is limited by dynamic disorder that tends to localize charges. This study proposes an innovative design that combines a chemical structure based on sulfur-rich thienoacene with a solid-state herringbone (HB) packing to overcome this limitation. Two new thienoacenes are synthesized and characterized, and their charge transport properties are investigated. The results show promising device performances and pave the way for the design of high-performing materials based on this new thienoacene.
The charge transport of crystalline organic semiconductors is limited by dynamic disorder that tends to localize charges. It is the main hurdle to overcome in order to significantly increase charge carrier mobility. An innovative design that combines a chemical structure based on sulfur-rich thienoacene with a solid-state herringbone (HB) packing is proposed and the synthesis, physicochemical characterization, and charge transport properties of two new thienoacenes bearing a central tetrathienyl core fused with two external naphthyl rings: naphtho[2,3-b]thieno-[2 ''',3 ''':4 '',5 '']thieno[2 '',3 '':4 ',5 ']thieno[3 ',2 '-b]naphtho[2,3-b]thiophene (DN4T) and naphtho[1,2-b]thieno-[2 ''',3 ''':4 '',5 '']thieno[2 '',3 '':4 ',5 ']thieno[3 ',2 '-b]naphtho[1,2-b]thiophene are presented. Both compounds crystallize with a HB pattern structure and present transfer integrals ranging from 33 to 99 meV (for the former) within the HB plane of charge transport. Molecular dynamics simulations point toward an efficient resilience of the transfer integrals to the intermolecular sliding motion commonly responsible for strong variations of the electronic coupling in the crystal. Best device performances are reached with DN4T with hole mobility up to mu = 2.1 cm(2) V(-1)s(-1) in polycrystalline organic field effect transistors, showing the effectiveness of the electronic coupling enabled by the new aromatic core. These promising results pave the way to the design of high-performing materials based on this new thienoacene, notably through the introduction of alkyl side-chains.

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