期刊
ADVANCED SCIENCE
卷 9, 期 17, 页码 -出版社
WILEY
DOI: 10.1002/advs.202200844
关键词
InAs quantum dots; infrared sensing; printed photonics
资金
- FWO-Vlaanderen
- Ghent University [GOA 01G01019]
- SIM-Flanders
QD photodiodes made from non-restricted In(As,P) QDs demonstrate sensitivity for SWIR light up to 1400 nm, making them promising for applications in QD image sensors.
Short-wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD-SWIR imagers is, however, hampered by a reliance on restricted elements such as Pb and Hg. Here, QD photodiodes, the central element of a QD image sensor, made from non-restricted In(As,P) QDs that operate at wavelengths up to 1400 nm are demonstrated. Three different In(As,P) QD batches that are made using a scalable, one-size-one-batch reaction and feature a band-edge absorption at 1140, 1270, and 1400 nm are implemented. These QDs are post-processed to obtain In(As,P) nanocolloids stabilized by short-chain ligands, from which semiconducting films of n-In(As,P) are formed through spincoating. For all three sizes, sandwiching such films between p-NiO as the hole transport layer and Nb:TiO2 as the electron transport layer yields In(As,P) QD photodiodes that exhibit best internal quantum efficiencies at the QD band gap of 46 +/- 5% and are sensitive for SWIR light up to 1400 nm.
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