4.8 Article

Progressive and Stable Synaptic Plasticity with Femtojoule Energy Consumption by the Interface Engineering of a Metal/Ferroelectric/Semiconductor

期刊

ADVANCED SCIENCE
卷 9, 期 22, 页码 -

出版社

WILEY
DOI: 10.1002/advs.202201502

关键词

energy efficiency; linearity; low reading current; short operation time; symmetry

资金

  1. National RD Programs [2013R1A3A2042120, 2022R1A2C3004135, 2021M3F3A2A01037740]
  2. Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [2021M3H4A1A03054864]
  3. Konkuk University Researcher Fund
  4. KIST Institutional Program [2E31221-21-049]
  5. National Research Foundation of Korea [2021M3H4A1A03054864] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

In this study, an energy-efficient synaptic device is developed for large-scale neuromorphic arrays, which mimics the cognitive system of the human brain. The device operates with low energy consumption and short operation time, comparable to synaptic events in the human brain. By adjusting the Schottky barrier and domain switching in the ferroelectric film, the weight update is achieved with low nonlinearity, asymmetry, and excellent stability.
In the era of big data, the cognitive system of the human brain is being mimicked through hardware implementation of highly accurate neuromorphic computing by progressive weight update in synaptic electronics. Low-energy synaptic operation requires both low reading current and short operation time to be applicable to large-scale neuromorphic computing systems. In this study, an energy-efficient synaptic device is implemented comprising a Ni/Pb(Zr0.52Ti0.48)O-3 (PZT)/0.5 wt.% Nb-doped SrTiO3 (Nb:STO) heterojunction with a low reading current of 10 nA and short operation time of 20-100 ns. Ultralow femtojoule operation below 9 fJ at a synaptic event, which is comparable to the energy required for synaptic events in the human brain (10 fJ), is achieved by adjusting the Schottky barrier between the top electrode and ferroelectric film. Moreover, progressive domain switching in ferroelectric PZT successfully induces both low nonlinearity/asymmetry and good stability of the weight update. The synaptic device developed here can facilitate the development of large-scale neuromorphic arrays for artificial neural networks with low energy consumption and high accuracy.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据