相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Low-Energy Oxygen Plasma Injection of 2D Bi2Se3 Realizes Highly Controllable Resistive Random Access Memory
Chujun Yin et al.
ADVANCED FUNCTIONAL MATERIALS (2022)
Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content
Wenjing Li et al.
CERAMICS INTERNATIONAL (2022)
Low-Frequency-Noise Spectroscopy of TaOx-based Resistive Switching Memory
Kota Sugawara et al.
ADVANCED ELECTRONIC MATERIALS (2022)
Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion
Aishani Mazumder et al.
ADVANCED ELECTRONIC MATERIALS (2022)
Broadband Bi2O2Se Photodetectors from Infrared to Terahertz
Yunfeng Chen et al.
ADVANCED FUNCTIONAL MATERIALS (2021)
Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS
Xiu Fang Lu et al.
NANO LETTERS (2021)
Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics
Usman Khan et al.
ADVANCED FUNCTIONAL MATERIALS (2021)
Out-of-Plane Resistance Switching of 2D Bi2O2Se at the Nanoscale
Wenjun Chen et al.
ADVANCED FUNCTIONAL MATERIALS (2021)
A flexible nickel phthalocyanine resistive random access memory with multi-level data storage capability
Tariq Aziz et al.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY (2021)
Structural Analysis and Performance in a Dual-Mechanism Conductive Filament Memristor
Shu-Chin Tsai et al.
ADVANCED ELECTRONIC MATERIALS (2021)
Analog and Digital Mode α-In2Se3 Memristive Devices for Neuromorphic and Memory Applications
Yishu Zhang et al.
ADVANCED ELECTRONIC MATERIALS (2021)
Transient and Biocompatible Resistive Switching Memory Based on Electrochemically-Deposited Zinc Oxide
Qi Xue et al.
ADVANCED ELECTRONIC MATERIALS (2021)
Low-Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe2 for In-Memory Computing
Long Liu et al.
ADVANCED SCIENCE (2021)
High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient
Tariq Aziz et al.
NANOSCALE (2021)
Flexible3Dmemristor array for binary storage and multi-states neuromorphic computing applications
Tian-Yu Wang et al.
INFOMAT (2021)
Bidirectional All-Optical Synapses Based on a 2D Bi2O2Se/Graphene Hybrid Structure for Multifunctional Optoelectronics
Chia-Ming Yang et al.
ADVANCED FUNCTIONAL MATERIALS (2020)
Two-Dimensional Unipolar Memristors with Logic and Memory Functions
Lei Yin et al.
NANO LETTERS (2020)
Flexible and fully biodegradable resistance random access memory based on a gelatin dielectric
Shuting Liu et al.
NANOTECHNOLOGY (2020)
High-Fidelity Transfer of 2D Bi2O2Se and Its Mechanical Properties
Wenjun Chen et al.
ADVANCED FUNCTIONAL MATERIALS (2020)
A native oxide high-κ gate dielectric for two-dimensional electronics
Tianran Li et al.
NATURE ELECTRONICS (2020)
Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatment
Li Zhang et al.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY (2020)
Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors
Teng Tu et al.
NANO LETTERS (2020)
Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model
Seung Hwan Lee et al.
ACS APPLIED ELECTRONIC MATERIALS (2020)
Broadband photoelectric tunable quantum dot based resistive random access memory
Zhiliang Chen et al.
JOURNAL OF MATERIALS CHEMISTRY C (2020)
Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors
Congwei Tan et al.
NANO LETTERS (2019)
Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV
Renjing Xu et al.
NANO LETTERS (2019)
Oxygen-assisted synthesis of hBN films for resistive random access memories
Weiyi Lin et al.
APPLIED PHYSICS LETTERS (2019)
Bolometric Effect in Bi2O2Se Photodetectors
Hang Yang et al.
SMALL (2019)
Ultrasensitive 2D Bi2O2Se Phototransistors on Silicon Substrates
Qundong Fu et al.
ADVANCED MATERIALS (2019)
Truly Concomitant and Independently Expressed Short- and Long-Term Plasticity in a Bi2O2Se-Based Three-Terminal Memristor
Ziyang Zhang et al.
ADVANCED MATERIALS (2019)
Thinnest Nonvolatile Memory Based on Monolayer h-BN
Xiaohan Wu et al.
ADVANCED MATERIALS (2019)
A unipolar nonvolatile resistive switching behavior in a layered transition metal oxide
Junjun Wang et al.
NANOSCALE (2019)
High-Performance Near-Infrared Photodetector Based on Ultrathin Bi2O2Se Nanosheets
Jie Li et al.
ADVANCED FUNCTIONAL MATERIALS (2018)
Bipolar resistive switching behavior in MoS2 nanosheets fabricated on ferromagnetic shape memory alloy
Anuj Kumar et al.
APPLIED PHYSICS LETTERS (2018)
Raman Spectra and Strain Effects in Bismuth Oxychalcogenides
Ting Cheng et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2018)
Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals
Jianbo Yin et al.
NATURE COMMUNICATIONS (2018)
Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory
Guangdong Zhou et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2017)
Controlled Synthesis of High-Mobility Atomically Thin Bismuth Oxyselenide Crystals
Jinxiong Wu et al.
NANO LETTERS (2017)
Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array
Ya-Xiong Zhou et al.
NANOSCALE (2017)
High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se
Jinxiong Wu et al.
NATURE NANOTECHNOLOGY (2017)
Chemical Patterning of High-Mobility Semiconducting 2D Bi2O2Se Crystals for Integrated Optoelectronic Devices
Jinxiong Wu et al.
ADVANCED MATERIALS (2017)
Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching
Na Xiao et al.
ADVANCED FUNCTIONAL MATERIALS (2017)
Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets
Peifu Cheng et al.
NANO LETTERS (2016)
Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory
Chih-Hung Pan et al.
APPLIED PHYSICS EXPRESS (2016)