Tuning weak localization in single-layer disordered SnSe2/graphene/h-BN field-effect device

We report fabrication and measurements of single-layer SnSe2/chemical vapor deposition (CVD) graphene/hexagonal boron nitride (h-BN) field-effect device. The coherent magnetotransport properties of such a hybrid system are systematically studied so as to obtain a good understanding of the structure which may find potential applications in thermoelectricity, flexible electronics, quantum coherent sensor as well as stress sensing. We observed weak localization well described by the Hikami-Larkin-Nagaoka model and the phase coherence length is around 540 nm for V (BG) = -20 V at 1 K. The phase coherence length could be effectively changed by controlling the temperature and gate voltage. We also obtain good field-effect dependent properties of atomic-scale SnSe2 ultrathin film/graphene system. Given the current challenges in tuning single-layer SnSe2/CVD graphene on h-BN with a suitable dielectric layer, our results suggest the potential of quantum coherent effect, an effective way for development of future quantum nano-switch device.

Automated summary

In this study, the fabrication and measurements of a single-layer SnSe2/CVD graphene/h-BN field-effect device were reported. The coherent magnetotransport properties of this hybrid system were systematically studied, revealing the potential of quantum coherent effect and its applications in fields such as thermoelectricity, flexible electronics, and quantum coherent sensing.