相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy
Patrick Vogt et al.
APL MATERIALS (2021)
Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and ((2)over-bar01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)
P. Mazzolini et al.
APL MATERIALS (2020)
Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy
Akhil Mauze et al.
APL MATERIALS (2020)
Point defects in Ga2O3
Matthew D. McCluskey
JOURNAL OF APPLIED PHYSICS (2020)
Suitability of binary oxides for molecular-beam epitaxy source materials: A comprehensive thermodynamic analysis
Kate M. Adkison et al.
APL MATERIALS (2020)
Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Akhil Mauze et al.
APPLIED PHYSICS LETTERS (2020)
Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
Galia Pozina et al.
SCIENTIFIC REPORTS (2020)
Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy
P. Mazzolini et al.
APL MATERIALS (2019)
Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality
M. Kneiss et al.
APL MATERIALS (2019)
β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy
Jiaqi Wei et al.
JOURNAL OF SEMICONDUCTORS (2019)
A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism
Bo Fu et al.
JOURNAL OF SEMICONDUCTORS (2019)
Towards High-Mobility Heteroepitaxial β-Ga2O3 on Sapphire - Dependence on The Substrate Off-Axis Angle
Subrina Rafique et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2018)
Growth and etching characteristics of (001) beta-Ga2O3 by plasma-assisted molecular beam epitaxy
Yuichi Oshima et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
Quantum Dot Self-Assembly Driven by a Surfactant-Induced Morphological Instability
Ryan B. Lewis et al.
PHYSICAL REVIEW LETTERS (2017)
Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy
Patrick Vogt et al.
APPLIED PHYSICS LETTERS (2016)
Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption
Patrick Vogt et al.
APPLIED PHYSICS LETTERS (2016)
Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates-A quantitative model
R. Schewski et al.
JOURNAL OF APPLIED PHYSICS (2016)
Well-Ordered In Adatoms at the In2O3(111) Surface Created by Fe Deposition
Margareta Wagner et al.
PHYSICAL REVIEW LETTERS (2016)
Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1-x)2O3
Patrick Vogt et al.
APL MATERIALS (2016)
The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy
Patrick Vogt et al.
APPLIED PHYSICS LETTERS (2015)
Epitaxial growth of gallium oxide films on c-cut sapphire substrate
W. Seiler et al.
THIN SOLID FILMS (2015)
Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
Kohei Sasaki et al.
APPLIED PHYSICS EXPRESS (2012)
Adsorption dynamics of ethylene on Si(001)
M. A. Lipponer et al.
JOURNAL OF CHEMICAL PHYSICS (2012)
β-Ga2O3 growth by plasma-assisted molecular beam epitaxy
Min-Ying Tsai et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2010)
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
S. Fernandez-Garrido et al.
JOURNAL OF APPLIED PHYSICS (2008)
Plasma-assisted molecular beam epitaxy and characterization of SnO(2) (101) on r-plane sapphire
M. E. White et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2008)
Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy -: art. no. 071901
L He et al.
APPLIED PHYSICS LETTERS (2006)
Modeling of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy using TMGa/NH3/H2 system:: A computational fluid dynamics simulation study
A Hirako et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2005)
Effect of O/Zn flux ratio on crystalline quality of ZnO films grown by plasma-assisted molecular beam epitaxy
H Kato et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2003)
分享论文
