Synthesis and Characterization of Cu2ZnSnSe4 by Non-Vacuum Method for Photovoltaic Applications

Wet ball milling was used for the synthesis of Cu2ZnSnSe4 (CZTSe) nanoparticles with a kesterite structure. The prepared nanoparticles were used for ink formulation. Surfactants and binders were added to improve the ink stability, prevent agglomeration, and enhance ink adhesion. The films deposited via spin coating were annealed at different temperatures using a rapid thermal processing system in the presence of selenium powder in an inert environment. Analytical techniques, such as X-ray diffraction, Raman spectroscopy, and Fourier-transform infrared spectroscopy, were used to confirm the formation of CZTSe nanoparticles with a single-phase, crystalline kesterite structure. Field-emission scanning electron microscopy and energy-dispersive X-ray spectroscopy were used to study the surface morphology and chemical composition of the thin films before and after annealing, with and without the sodium solution. The optoelectrical properties were investigated using ultraviolet-visible spectroscopy and Hall measurements. All the prepared CZTSe thin films exhibited a p-type nature with an optical bandgap in the range of 0.82-1.02 eV. The open-circuit voltage and fill factor of the CZTSe-based devices increased from 266 to 335 mV and from 37.79% to 44.19%, respectively, indicating a decrease in the number of recombination centers after Na incorporation.

Automated summary

Wet ball milling was used to synthesize Cu2ZnSnSe4 (CZTSe) nanoparticles with a kesterite structure. Surfactants and binders were added to improve ink stability and adhesion. Analytical techniques confirmed the formation of CZTSe nanoparticles with a crystalline kesterite structure. CZTSe-based devices with sodium incorporation exhibited higher open-circuit voltage and fill factor.