期刊
NANOMATERIALS
卷 12, 期 9, 页码 -出版社
MDPI
DOI: 10.3390/nano12091454
关键词
perovskite light-emitting diode; FAPb(0.7)Sn(0.3)Br(3) film; double hole transport structure; light-emitting layer thickness
类别
资金
- Guangdong Basic and Applied Basic Research Foundation [2019A1515110230, 2021A1515012055]
- Ministry of Education Industry-University Cooperation and Collaborative Education Project [202002105037]
- Shenzhen Technology Research Project [JSGG20201102162200002]
- Shenzhen Technology University School-Enterprise Cooperation Project [20211064010033]
Highly luminescent FAPb(0.7)Sn(0.3)Br(3) nanocrystals were synthesized with an average photoluminescence quantum yield of 92%, making them suitable luminescent layers for PeLEDs. Double hole-transport layers play a crucial role in improving the electrical-to-optical conversion efficiency of PeLEDs, with TFB/PVK double HTLs significantly enhancing EQE.
Highly luminescent FAPb(0.7)Sn(0.3)Br(3) nanocrystals with an average photoluminescence (PL) quantum yield of 92% were synthesized by the ligand-assisted reprecipitation method. The 41-nm-thick perovskite film with a smooth surface and strong PL intensity was proven to be a suitable luminescent layer for perovskite light-emitting diodes (PeLEDs). Electrical tests indicate that the double hole-transport layers (HTLs) played an important role in improving the electrical-to-optical conversion efficiency of PeLEDs due to their cascade-like level alignment. The PeLED based on poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))-diphenylamine)] (TFB)/poly(9-vinylcarbazole) (PVK) double HTLs produced a high external quantum efficiency (EQE) of 9%, which was improved by approximately 10.9 and 5.14 times when compared with single HTL PVK or the TFB device, respectively. The enhancement of the hole transmission capacity by TFB/PVK double HTLs was confirmed by the hole-only device and was responsible for the dramatic EQE improvement.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据