Revisiting the Rate-Dependent Mechanical Response of Typical Silicon Structures via Molecular Dynamics

Strain rate is a critical parameter in the mechanical application of nano-devices. A comparative atomistic study on both perfect monocrystalline silicon crystal and silicon nanowire was performed to investigate how the strain rate affects the mechanical response of these silicon structures. Using a rate response model, the strain rate sensitivity and the critical strain rate of two structures were given. The rate-dependent dislocation activities in the fracture process were also discussed, from which the dislocation nucleation and motion were found to play an important role in the low strain rate deformations. Finally, through the comparison of five equivalent stresses, the von Mises stress was verified as a robust yield criterion of the two silicon structures under the strain rate effects.

Automated summary

This study compared the mechanical responses of perfect monocrystalline silicon crystal and silicon nanowire under different strain rates. The results revealed that dislocation nucleation and motion played a crucial role in low strain rate deformations. Additionally, the von Mises stress was confirmed as a reliable yield criterion for the two silicon structures under the effects of strain rate.