4.7 Article

Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Engineering, Electrical & Electronic

Material and process engineering challenges in Ge-rich GST for embedded PCM

Andrea Redaelli et al.

Summary: Phase-Change Memory (PCM) is a new technology entering the consumer and automotive embedded memory market. However, traditional PCM materials face limitations due to temperature constraints, leading researchers to develop innovative solutions for active materials to function in harsh conditions.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2022)

Article Chemistry, Multidisciplinary

Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys

Stefano Cecchi et al.

Summary: This study investigates the composition of Ge-rich Ge2Sb2Te5 alloy and finds that it is less prone to decompose and segregate germanium.

NANOMATERIALS (2022)

Article Chemistry, Multidisciplinary

Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys

Caroline Cheze et al.

Summary: In this study, the electronic properties of PCM double-layered heterostructures deposited on silicon substrates were characterized. The composition evolution and interdiffusion of the heterostructure interface were obtained using XPS and UPS. The final composition of the GGST layer was found to be close to GST212, and the density of states calculated by density functional theory was in agreement with experimental results. Differences in the crystallization process were discussed based on the photoemission results.

NANOMATERIALS (2022)

Article Materials Science, Multidisciplinary

The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature

L. Prazakova et al.

Summary: This paper investigates the crystallization mechanisms of Ge-rich GeSbTe alloys through structural analysis. The experimental results reveal that during heating, there are competing phenomena such as diffusion and segregation of Ge, as well as nucleation and growth of GeSbTe and Ge phases, which are dependent on the Ge content.

MATERIALIA (2022)

Article Chemistry, Physical

Germanium, antimony, tellurium, their binary and ternary alloys and the impact of nitrogen: An X-ray photoelectron study

E. Nolot et al.

Summary: The structural features and electrical properties of thin materials developed for phase change memory are highly influenced by stoichiometry and binding states. Chemical state X-ray photoelectron spectroscopic analysis of materials such as GeTe, Sb2Te3, and GST is challenging due to overlapping binding energies when samples are exposed to air. Quasi in situ XPS has been used to characterize PCM materials and investigate the influence of nitrogen and air exposure on their binding states.

APPLIED SURFACE SCIENCE (2021)

Article Chemistry, Multidisciplinary

Phase Change Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

Arun Kumar et al.

Summary: Ge-rich Ge-Sb-Te/Sb2Te3 core-shell nanowires were successfully grown by metal-organic chemical vapor deposition, with detailed characterization of their surface morphology, crystalline structure, vibrational properties, and elemental composition achieved through various techniques.

NANOMATERIALS (2021)

Article Chemistry, Multidisciplinary

High-Throughput Calculations on the Decomposition Reactions of Off-Stoichiometry GeSbTe Alloys for Embedded Memories

Omar Abou El Kheir et al.

Summary: Through high-throughput calculations based on Density Functional Theory, this study uncovered the most favorable decomposition pathways of Ge-rich GST alloys, providing new insights for the research of embedded phase-change memories.

NANOMATERIALS (2021)

Article Materials Science, Multidisciplinary

Density functional simulations of decomposition pathways of Ge-rich GeSbTe alloys for phase change memories

O. Abou El Kheir et al.

Summary: Germanium-rich GeSbTe alloys have emerged as promising materials for embedded phase change memories in the automotive sector due to their high crystallization temperature, but the crystallization process may lead to phase separation and resistance drift, requiring a better understanding of the decomposition process.

PHYSICAL REVIEW MATERIALS (2021)

Review Physics, Applied

Phase change memory for automotive grade embedded NVM applications

Paolo Cappelletti et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)

Article Physics, Applied

Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications

S. M. S. Privitera et al.

JOURNAL OF APPLIED PHYSICS (2020)

Article Materials Science, Multidisciplinary

Crystallization Study of Ge-Rich (GeTe)m(Sb2Te3)n Using Two-Step Annealing Process

Francesco Di Biagio et al.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2019)

Article Materials Science, Multidisciplinary

Single-step Au-catalysed synthesis and microstructural characterization of core-shell Ge/In-Te nanowires by MOCVD

Raimondo Cecchini et al.

MATERIALS RESEARCH LETTERS (2018)

Article Materials Science, Coatings & Films

The effect of carbon content on the phase structure of amorphous/nanocrystalline Ge1-x-Cx films prepared by PECVD

Hossein Jamali et al.

SURFACE & COATINGS TECHNOLOGY (2017)

Article Physics, Applied

Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires

S. Selmo et al.

APPLIED PHYSICS LETTERS (2016)

Article Engineering, Electrical & Electronic

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Paola Zuliani et al.

SOLID-STATE ELECTRONICS (2015)

Article Engineering, Electrical & Electronic

A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory

Athanasios Kiouseloglou et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)

Proceedings Paper Electrochemistry

Germanium Nanocrystals-MWCNTs composites as anode materials for Lithium Ion Batteries

S. Goriparti et al.

17TH INTERNATIONAL MEETING ON LITHIUM BATTERIES (IMLB 2014) (2014)

Article Physics, Applied

Comparison of thermal stabilities between Ge-Sb-Te and In-Sb-Te phase change materials

Yong Tae Kim et al.

APPLIED PHYSICS LETTERS (2013)

Article Engineering, Electrical & Electronic

Overcoming Temperature Limitations in Phase Change Memories With Optimized GexSbyTez

Paola Zuliani et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)

Article Telecommunications

Internet of Things: Applications and Challenges in Technology and Standardization

Debasis Bandyopadhyay et al.

WIRELESS PERSONAL COMMUNICATIONS (2011)

Article Materials Science, Multidisciplinary

Temperature-dependent high-resolution X-ray photoelectron spectroscopic study on Ge1Sb2Te4

Y. M. Lee et al.

THIN SOLID FILMS (2010)

Article Physics, Condensed Matter

Vibrational properties of hexagonal Ge2Sb2Te5 from first principles

G. C. Sosso et al.

JOURNAL OF PHYSICS-CONDENSED MATTER (2009)

Article Chemistry, Multidisciplinary

Electronic Structure of Te/Sb/Ge and Sb/Te/Ge Multi Layer Films Using Photoelectron Spectroscopy

Ju Heyuck Baeck et al.

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2009)

Review Chemistry, Physical

Phase-change materials for rewriteable data storage

Matthias Wuttig et al.

NATURE MATERIALS (2007)

Article Engineering, Electrical & Electronic

Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory

YF Lai et al.

JOURNAL OF ELECTRONIC MATERIALS (2005)