Structure, Morphology and Electrical/Magnetic Properties of Ni-Mg Nano-Ferrites from a New Perspective

Using the auto combustion flash method, Ni1-x+2Mgx+2Fe2+3O4 (x = 0, 0.2, 0.6, 0.8 and 1) nano-ferrites were synthesized. All samples were thermally treated at 973 K for 3 h. The structural analysis for the synthesized samples was performed using XRD, high-resolution transmission electron microscopy (HRTEM), and FTIR. Scanning electron microscopy (SEM) was undertaken to explore the surface morphology of all the samples. The thermal stability of these samples was investigated using thermogravimetric analysis (TGA). XRD data show the presence of a single spinel phase for all the prepared samples. The intensity of the principal peak of the spinel phase decreases as Mg content increases, showing that Mg delays crystallinity. The Mg content raised the average grain size (D) from 0.084 mu m to 0.1365 mu m. TGA shows two stages of weight loss variation. The vibrating sample magnetometer (VSM) measurement shows that magnetic parameters, such as initial permeability (mu(i)) and saturation magnetization (M-s), decay with rising Mg content. The permeability and magnetic anisotropy at different frequencies and temperatures were studied to show the samples' magnetic behavior and determine the Curie temperature (T-C), which depends on the internal structure. The electrical resistivity behavior shows the semi-conductivity trend of the samples. Finally, the dielectric constant increases sharply at high temperatures, explained by the increased mobility of charge carriers, and decreases with increasing frequency.

Automated summary

In this study, Ni1-x+2Mgx+2Fe2+3O4 nano-ferrites with different Mg doping levels were synthesized using the auto combustion flash method, and their structural, thermal stability, and magnetic properties were investigated. The results showed that increasing the Mg content delayed the crystallization process and increased the average grain size. The magnetic parameters decreased with increasing Mg content. Additionally, the electrical resistivity of the samples exhibited a semiconductor trend, and the dielectric constant sharply increased at high temperatures, attributed to the enhanced mobility of charge carriers.