Modeling the Radial Growth of Self-Catalyzed III-V Nanowires

A new model for the radial growth of self-catalyzed III-V nanowires on different substrates is presented, which describes the nanowire morphological evolution without any free parameters. The model takes into account the re-emission of group III atoms from a mask surface and the shadowing effect in directional deposition techniques such as molecular beam epitaxy. It is shown that radial growth is faster for larger pitches of regular nanowire arrays or lower surface density, and can be suppressed by increasing the V/III flux ratio or decreasing re-emission. The model describes quite well the data on the morphological evolution of Ga-catalyzed GaP and GaAs nanowires on different substrates, where the nanowire length increases linearly and the radius enlarges sub-linearly with time. The obtained analytical expressions and numerical data should be useful for morphological control over different III-V nanowires in a wide range of growth conditions.

Automated summary

A new model is proposed for the radial growth of self-catalyzed III-V nanowires on different substrates, which takes into account the re-emission of group III atoms and the shadowing effect in directional deposition techniques. The model accurately describes the morphological evolution of Ga-catalyzed GaP and GaAs nanowires on different substrates, providing useful insights for morphological control over III-V nanowires.